期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 38, 期 8, 页码 2308-2314出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2020.2964618
关键词
Compound semiconductors; optical modulation; optical waveguides; phase modulation
资金
- Air Force Research Laboratory [FA8650-15-2-5220]
- NSF [1711446]
- Directorate For Engineering [1711446] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1711446] Funding Source: National Science Foundation
AlGaAs bulk electro-optic Mach-Zehnder modulators with low Vp are reported. Epilayer design is an npin, which is shown to be equivalent to a pin. Measured Vp is 1 V for 1 cm long electrode and this result agrees very well with the numerical modeling. Modulator capacitance remains constant and current through the device is negligible over a wide bias range. Lowest bandgap of the material in the active waveguide region is larger than twice the photon energy at 1550 nm, significantly reducing material absorption, including two-photon absorption. Modulator characteristics remain unchanged under coupled input optical powers approaching 160mW. Low Vp combined with high optical power handling capability make these devices suitable for analog photonic links.
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