期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 38, 期 6, 页码 1365-1371出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2019.2953690
关键词
Integrated photonics; intensity modulator; optical modulation; silicon ITO photonics
资金
- Defense Research and Development Organisation (DRDO), Government of India [ERIP/ER/1303134/M/01/1616]
- Nano-Mission, Department of Science and Technology, Government of India [DST-NM/NT-1009/2017]
An Optical modulator based on a hybrid optical waveguide made up of Silicon and Indium Tin Oxide (ITO) is proposed. The hybrid waveguide is created by the coupling of a leaky optical mode guided in silicon with ITO. The optical modulation is realized with the heterojunction between p-type silicon and n-type ITO. The presence of ITO causes electrical tuning in permittivity and in imaginary-part of the refractive index which provide a way to modulate the intensity of the guide optical mode. The device with Si-ITO heterojunction is fabricated to show intensity modulation at 1.55 mu m wavelength. To achieve an efficient optical modulation the carrier concentration of ITO is optimized by depositing ITO on p-type Si wafer at different oxygen partial pressures using Ion assisted electro-beam deposition. The fabricated device exhibiting an extinction ratio of 7 dB for 1.7 mm long device at low voltage of -5 volts.
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