Measurement of interfacial thermal conductance of few-layer MoS2 supported on different substrates using Raman spectroscopy

Atomically thin molybdenum disulfide (MoS2) has attracted significant research interest due to its unique properties, e.g., large on/off ratio, moderate bandgap, and ultralow standby power dissipation, which offer the potential for advanced devices. Interfacial thermal transport significantly affects the heat removal abilities of the devices, thus influencing the thermal stability of the devices. In this work, high thermal conductivity material graphene is used as a supporting substrate for MoS2 to improve heat dissipation in devices based on MoS2. Combining temperature- and laser power-dependent Raman spectroscopy studies, interfacial thermal conductance (g) of five-layer MoS2 supported on SiO2/Si and three-layer graphene substrates are obtained, which are 1.73 +/- 0.07MWm(-2)K(-1) and 2.56 +/- 0.08MWm(-2)K(-1), respectively. It is found that a 47.9% increase of g for MoS2 was supported by graphene. Using the high thermal conductivity material graphene as a supporting substrate for MoS2, therefore, opens up another channel for conducting heat, and this dramatically increases the thermal stability of the devices based on MoS2. Our results shed light on experimentally probing interfacial thermal conductance between MoS2 flakes and different supported substrates.