Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

Conduction properties of the junctions of chalcogenide alloys Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te with metals are investigated to examine the capability for realizing the interfacial resistive switch. Electrically reversible spontaneous generation of insulating interfaces can take place with Al in all the cases. Controllable resistance switching is thereby demonstrated to occur for a range of alloys that consist of group V elements, transition metals, and chalcogens. The sheet resistivity of the chalcogenide films changes orders of magnitude when the material synthesis temperature is varied. Optimum conditions for the resistive switch devices are explored with emphasis on slowly progressing interfacial chemical reactions that cause aging effects. The dependence on the synthesis temperature is examined further in terms of the structural and optical properties. In addition, the spontaneous interface reaction is confirmed using transmission electron microscopy. (C) 2020 Elsevier B.V. All rights reserved.