期刊
CERAMICS INTERNATIONAL
卷 42, 期 7, 页码 8115-8119出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2016.02.014
关键词
Interfaces; Thin-film transistors; Electronic materials; Compounded dielectrics; Density-of-states
资金
- National Natural Science Foundation of China [61077013, 61274082, 51072111]
- China Postdoctoral Science Foundation [2015T580315]
We fabricated compounded ZrO2-Al2O3 nanolaminate dielectrics by the atomic layer deposition (ALD) and used them to successfully integrate the high-performance InZnO (IZO) thin-film transistors (TFTs). It is found that nanolaminate dielectrics combine the advantages of constituent dielectrics and produce TFTs with improved performance and stability compared to single-layer gate insulators. The mobility in IZO-TFT was enhanced about 22% by using ZrO2-Al2O3 gate insulators and the stability was also improved. The transfer characteristics of IZO-TFTs at different temperatures were also investigated and temperature stability enhancement was observed for the TFT with ZrO2-Al2O3 nanolaminates as gate insulators. A larger falling rate (similar to 1.45 eV/V), a lower activation energy (Ea, similar to 1.38 eV) and a smaller density-of-states (DOS) were obtained based on the temperature-dependent transfer curves. The results showed that temperature stability enhancement in InZnO thin-film transistors with ZrO2-Al2O3 nano laminate as gate insulators was attributed to the smaller DOS. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据