期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 4, 页码 1517-1522出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2974864
关键词
FinFET; hot carrier; reliability; static random-access memory (SRAM); variability
资金
- NSFC [61874005, 61421005, 61927901]
- 111 Project [B18001]
In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is studied with decomposing the variation contributions of multiple types of traps. The nonlinear relationship of are newly observed in both n- and p-type FinFETs. A multitrap-based HCD variation model is proposed and verified in FinFETs. The impacts of HCD variations on the static random-access memory (SRAM) read/write stability are also demonstrated with the circuit simulation. The results are beneficial for the reliability-aware circuit design against HCD variability particularly for FinFET-based circuits.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据