In-situ growth and characterization of SiC fibers during Si vapor infiltration process without catalysis

SiC fibers were synthesized on the surface of reaction sintered SiC substrate by Si vapor deposition without catalyst at 1700 degrees C for 4 h in the nitrogen atmosphere. SiC fibers were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The results indicate that the fibers have beta-SiC structure and their diameters are several-hundred nanometers. The length of the SiC fibers is similar to 1.5-3.0 mm and their growth direction is [111]. Investigation of growth mechanism indicates that the SiC fibers grow via the vapor-solid (VS) growth process. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights