期刊
CERAMICS INTERNATIONAL
卷 42, 期 11, 页码 12783-12788出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2016.05.039
关键词
(AlGa)(2)O-3 thin films; Pulsed laser deposition; Crystal quality; Raman spectroscopy
资金
- Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science and Technology, Japan
(AlGa)(2)O-3 thin films were deposited on (0001) sapphire substrates by pulsed laser deposition at different substrate temperatures. The influence of substrate temperature on surface morphology, optical properties, and crystal quality has been systematically investigated by atomic force microscope, transmission spectra, X-ray diffraction, and Raman spectroscopy. The results reveal that all the (AlGa)(2)O-3 films have smooth surface and high transmittance. The (AIGa)(2)O-3 film with the good crystal quality can be obtained at a substrate temperature of 400 degrees C. Our results provide an experimental basis for realizing the Ga2O3-based quantum well. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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