4.8 Article

Formation of Low-Volatile Products and Unexpected High Formaldehyde Yield from the Atmospheric Oxidation of Methylsiloxanes

期刊

ENVIRONMENTAL SCIENCE & TECHNOLOGY
卷 54, 期 12, 页码 7136-7145

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.est.0c01090

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资金

  1. LiaoNing Revitalization Talents Program [XLYC1907194]
  2. National Natural Science Foundation of China [21876024, 21677028]
  3. Major International Joint Research Programme [21661142001]
  4. Program for Changjiang Scholars and Innovative Research Team in University [IRT_13R05]
  5. Program of Introducing Talents of Discipline to Universities [B13012]
  6. Fundamental Research Funds for the Central Universities [9064-00001B]
  7. Independent Research Fund Denmark [9064-00001B]
  8. Supercomputing Center in Dalian University of Technology

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With stricter regulation of atmospheric volatile organic compounds (VOCs) originating from fossil fuel-based vehicles and industries, the use of volatile chemical products (VCPs) and the transformation mechanism of VCPs have become increasingly important to quantify air quality. Volatile methylsiloxanes (VMS) are an important class of VCPs and high-production chemicals. Using quantum chemical calculations and kinetics modeling, we investigated the reaction mechanism of peroxy radicals of VMS, which are key intermediates in determining the atmospheric chemistry of VMS. L2-RSiCH2O2 center dot and D3-RSiCH2O2 center dot derived from hexamethyldisiloxane and hexamethylcyclotrisiloxane, respectively, were selected as representative model systems. The results indicated that L2-RSiCH2O2 center dot and D3-RSiCH2O2 center dot follow a novel Si-C-O rearrangement-driven autoxidation mechanism, leading to the formation of low volatile silanols and high yield of formaldehyde at low NO/HO2 center dot conditions. At high NO/HO2 center dot conditions, L2-RSiCH2O2 center dot and D3-RSiCH2O2 center dot react with NO/HO2 center dot to form organic nitrate, hydroperoxide, and active alkoxy radicals. The alkoxy radicals further follow a Si-C-O rearrangement step to finally form formate esters. The novel Si-C-O rearrangement mechanism of both peroxy and alkoxy radicals are supported by available experimental studies on the oxidation of VMS. Notably, the high yield of formaldehyde is estimated to significantly contribute to formaldehyde pollution in the indoor environment, especially during indoor cleaning.

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