期刊
ELECTRONICS LETTERS
卷 56, 期 13, 页码 678-679出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2020.0281
关键词
power measurement; aluminium compounds; wide band gap semiconductors; gallium compounds; high electron mobility transistors; III-V semiconductors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device measurement; power added efficiency; PAE; two-tone power measurement; novel channel design; high-speed graded-channel HEMTs; high electron mobility transistors; high-efficiency millimetre-wave power amplifiers; RF power density operation; size 60; 0 nm; voltage 10; 0 V; frequency 30; 0 GHz; voltage 14; 0 V; efficiency 75 percent; efficiency 65 percent; AlGaN-GaN
The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two-tone power measurement, the graded-channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high-efficiency millimetre-wave (mmW) power amplifiers up to 3 W/mm RF power density operation.
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