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E. Scalise et al.
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Falco Huser et al.
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Simone Bertolazzi et al.
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Clemens Heitzinger et al.
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Debdeep Jena et al.
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SS Ahmed et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2005)
Narrow-width SOI devices: The role of quantum-mechanical size quantization effect and unintentional doping on the device operation
D Vasileska et al.
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Hasanur R. Khan et al.
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M. Nedjalkov et al.
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S. Ahmed et al.
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