期刊
ELECTRONIC MATERIALS LETTERS
卷 16, 期 3, 页码 299-309出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-020-00214-3
关键词
Monolayer MoS2; Polar optical phonon scattering; Strain engineering; Degeneracy breaking of Raman mode; Monte Carlo device simulation
资金
- U.S. National Science Foundation [1610474]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1610474] Funding Source: National Science Foundation
Recently, microelectromechanical system has been used to dynamically strain atomically thin materials including MoS2. While strain can significantly modulate the electronic and phonon structures of monolayer MoS2, its impact on electron transport, especially in the dissipative regime, has not been well explored. In this paper, using a three-dimensional particle-based quantum-corrected Monte Carlo device simulator, the effects of uniaxial and biaxial strain on room-temperature electron transport in a model monolayer molybdenum disulphide (MoS2) based field-effect transistor have been investigated. In the beginning, the simulator has been validated against recently published experimental results. Overall, strain in monolayer MoS2 strongly affects the polar optical phonon modes as well as the electronic bandstructure. Uniaxial strain breaks the degeneracy of E ' Raman mode and results in phonon softening. In this case, our results show that, for both E+ and E- Raman modes, ON current first increases for up to 3.7% of applied strain and then decreases as the strain is increased further. As for biaxial strain, we consider the effects of both tensile and compressive stresses. We find that the application of biaxial tensile strain boosts the ON current for up to 4% of strain. Especially, biaxial tensile strain leads to 15.56% increase in the ON current, which is highest for any type of applied stress. [GRAPHICS] .
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据