期刊
CHINESE PHYSICS B
卷 29, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/ab973f
关键词
silicon; optoelectronic synaptic devices; neuromorphic computing
资金
- National Key Research and Development Program of China [2017YFA0205704, 2018YFB2200101]
- National Natural Science Foundation of China [91964107, 61774133]
- Fundamental Research Funds for the Central Universities, China [2018XZZX003-02]
- National Natural Science Foundation of China for Innovative Research Groups [61721005]
- Zhejiang University Education Foundation Global Partnership Fund
High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.
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