4.5 Review

Silicon-based optoelectronic synaptic devices*

期刊

CHINESE PHYSICS B
卷 29, 期 7, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/ab973f

关键词

silicon; optoelectronic synaptic devices; neuromorphic computing

资金

  1. National Key Research and Development Program of China [2017YFA0205704, 2018YFB2200101]
  2. National Natural Science Foundation of China [91964107, 61774133]
  3. Fundamental Research Funds for the Central Universities, China [2018XZZX003-02]
  4. National Natural Science Foundation of China for Innovative Research Groups [61721005]
  5. Zhejiang University Education Foundation Global Partnership Fund

向作者/读者索取更多资源

High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.

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