期刊
CHEMISTRY OF MATERIALS
卷 32, 期 11, 页码 4544-4552出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.0c00503
关键词
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资金
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science and ICT, Korea [2012M3A6A5055728]
- National Research Foundation of Korea [2012M3A6A5055728] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This article describes a novel method for the direct synthesis of patterned graphene on transition-metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) with chemical vapor deposition (CVD) that uses a UV/ozone-treated solid carbon source, 1,2,3,4-tetraphenylnaphthalene (TPN) as the graphene growth precursor. The UV/ozone treatment of the TPN film on the MoS2 layer improves the interfacial adhesion between the TPN and MoS2 layers. The surface-adhered TPN is directly converted to graphene on the MoS2 layer, which results in a sharp interface between graphene and MoS2. The graphene/MoS2 heterostructure with interfacial bonding yields excellent electrical and mechanical characteristics that facilitate charge injection by reducing contact resistance and improving bending stability. The excellent contact enhances the field-effect mobility of MoS2 field-effect transistors to values up to three times higher than that of the devices using source-drain electrodes prepared with the conventionally transferred CVD-grown graphene. The proposed method for the direct synthesis of graphene on TMDs is expected to have wide applications in nanoelectronics based on 2D materials.
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