期刊
CARBON
卷 160, 期 -, 页码 273-286出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2020.01.030
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资金
- Meity [5(9)/2012-NANO (VOL-II)]
Herein, we elucidate the origin of high photoluminescence quantum yield (PL QY) and high surface-enhanced Raman scattering (SERS) sensitivity of in-situ nitrogen-doped graphene quantum dots (N-GQDs). We show that the doping of heteroatoms in GQDs facilitates the excited-state charge transfer and improved recombination in N-GQDs yielding a PL QY of similar to 34%. Our study reveals that growth of GQDs in dimethyformamide solvent enables the reduction of the nonradiative sites in N-GQDs and the rearrangement of the charge distribution in the graphitic plane. Further, we demonstrate N-GQDs as an efficient SERS substrate with an enhancement factor of 3.2 x 10(3) with 10(-4) M RhB target, which is similar to 7-fold higher than the previous reports. The comparative studies of the SERS for undoped and N- and S-doped GQDs allow us to assess the contribution of the Forster resonance energy transfer (FRET) and chemical enhancement (CM) factors. Further, by controlling the functional groups of N-GQDs with vacuum annealing, and with different laser excitations, we isolate the contributions of CM and FRET, for the first time. The optimized N-GQDs exhibits a SERS detection limit of 10(-10) M for RhB. Finally, N-GQDs combined with RhB is utilized to demonstrate a white light emitter with a CIE coordinate (0.30, 0.34). (C) 2020 Elsevier Ltd. All rights reserved.
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