Layer by layer exposure of subsurface defects and laser-induced damage mechanism of fused silica

Inert ion beams with large incident angle were used for layer by layer etching of chemical-mechanical polished fused silica. The evolution of the impurities, subsurface defects, surface roughness, and surface molecular structure after ion beam etching and their effects on the laser-induced damage threshold (LIDT) were investigated to understand the laser damage mechanism of fused silica. The impurity elements are mainly distributed at a depth of 0-200 nm of the sample surface, which will strongly absorb ultraviolet (UV) laser energy. The result is consistent with the measurement of weak photothermal absorption. After 500 nm removal of the fused silica surface, the deposition layer of polishing powder is removed, and the subsurface defects are exposed. Correspondingly, the amount and size of the defects reach the maximum, and result in the greastest surface roughness and deterioration of surface quality, which enhances the local optical field. As the removal depth increases, the passivation and removal of subsurface defects lead to a decrease in surface roughness and improvement of surface quality. In addition, the density of structural defects and the Si-O-Si bond angle will decrease after ion beam etching, which yields a densified and strengthened surface of fused silica. The results indicate that metallic impurities are the key factors that limit the improvement of LIDT. Moreover, subsurface defects restrict the further enhancement of LIDT. Therefore, ion beam etching can be developed to remove subsurface damage for improving the laser resistant capacity of fused silica.