Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes

Temperature-dependent behavior of regular and trench Ni/beta -Ga2O3 (001) Schottky barrier diodes (SBDs) was studied. Current-Voltage (I-V) characteristics, ideality factor, and barrier height of trench SBDs were compared with those of regular SBDs at temperatures ranging from 100K to 650K. The trench SBDs showed a superior performance to regular SBDs. At elevated temperatures (as high as 650K), the trench SBDs maintained a high ON/OFF current ratio (10(5)), which is four orders of magnitude higher than that in the regular diodes. The current-voltage characteristics of the trench SBDs were recovered when the sample was cooled to room temperature after high temperature measurements, whereas the I-V characteristics of the regular SBDs were degraded. The breakdown voltage (BV) was also measured on as-fabricated devices and after high temperature ramp up to 650K. We observed a reduction in maximum achieved BV from 1084V to 742V on the trench SBDs and from 662V to 488V on regular SBDs, respectively, after temperature-dependent measurements.