期刊
APPLIED PHYSICS LETTERS
卷 116, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0002520
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资金
- NASA SBIR Program [80NSSC19C0518]
Temperature-dependent behavior of regular and trench Ni/beta -Ga2O3 (001) Schottky barrier diodes (SBDs) was studied. Current-Voltage (I-V) characteristics, ideality factor, and barrier height of trench SBDs were compared with those of regular SBDs at temperatures ranging from 100K to 650K. The trench SBDs showed a superior performance to regular SBDs. At elevated temperatures (as high as 650K), the trench SBDs maintained a high ON/OFF current ratio (10(5)), which is four orders of magnitude higher than that in the regular diodes. The current-voltage characteristics of the trench SBDs were recovered when the sample was cooled to room temperature after high temperature measurements, whereas the I-V characteristics of the regular SBDs were degraded. The breakdown voltage (BV) was also measured on as-fabricated devices and after high temperature ramp up to 650K. We observed a reduction in maximum achieved BV from 1084V to 742V on the trench SBDs and from 662V to 488V on regular SBDs, respectively, after temperature-dependent measurements.
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