期刊
APPLIED PHYSICS LETTERS
卷 116, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5139256
关键词
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资金
- Australian Research Council [DP190101058, DP180100077]
- Ministry of Education and Science of the Russian Federation [8.9898.2017/6.7]
- Russian Foundation for Basic Research [19-57-12008]
The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV-/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.
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