期刊
APPLIED PHYSICS LETTERS
卷 116, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0003201
关键词
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资金
- Fundamental Research Funds for the Central Universities [2018B01714]
- Sichuan Science and Technology Program [2018RZ0017]
Herein, we quantitatively investigated the mechanisms of interfacial phonon mismatch and quantum confinement underlying the phonon bottleneck effect in InN/InxGa(1-x)N multiple quantum wells. Obvious extension of carrier thermalization with the longest relaxation time of 4.75 ns due to an enhanced phonon bottleneck effect was observed. It was found that a stronger quantum confinement could effectively reduce carrier relaxation rate via improving the elastic carrier-carrier scattering, while a larger phonon mismatch may give a higher initial carrier temperature due to the reflection of optical phonons and probably confinement of quasi-optical phonons. This study provides an essential theoretical insight into photovoltaic and other optoelectronic devices aiming to reduce the carrier relaxation rate via the phonon bottleneck effect.
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