期刊
APPLIED PHYSICS EXPRESS
卷 13, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab7e07
关键词
Domain wall; Magnetic tunneling junction; Neuromorphic; Spintronics
We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used to generate variable analog conductance changes. Magnetic tunnel junction with a perpendicularly magnetized DW layer was fabricated on a silicon substrate. Due to the forward and backward DW motions, a linear and symmetric conductance response was achieved. The impact of memristive behavior on neural networks was evaluated using numerical simulation of hand-written digit recognition. This spin-memristor is identified as one of the promising candidates for artificial synapses in analog neuromorphic devices.
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