4.8 Article

Lead-Free Halide Double Perovskite Cs2AgBiBr6with Decreased Band Gap

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 59, 期 35, 页码 15191-15194

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202005568

关键词

Ag-Bi disorder; band-gap engineering; crystal engineering; Cs2AgBiBr6; lead-free double perovskites

资金

  1. Knut and Alice Wallenberg Foundation
  2. Swedish Energy Agency [2018-004357]
  3. VR Starting Grant [2019-05279]
  4. Carl Tryggers Stiftelse
  5. Olle Engkvist Byggmastare Stiftelse
  6. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]
  7. Swedish Energy Agency
  8. SSF
  9. China Scholarship Council (CSC)
  10. Ministry of Science and High Education of the Russian Federation [075-15-2019-872 (14.Y26.31.0027/074-02-2018-327)]
  11. Swedish Research Council (VR) [2019-05551]
  12. Swedish Research Council [2016-07213]
  13. Swedish Research Council [2019-05551] Funding Source: Swedish Research Council

向作者/读者索取更多资源

Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs2AgBiBr6, shows attractive optical and electronic features, making it promising for high-efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal-engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs(2)AgBiBr(6)under ambient conditions. The band-gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first-principles calculations indicate that enhanced Ag-Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band-gap narrowing effect. This work provides new insights for achieving lead-free double perovskites with suitable band gaps for optoelectronic applications.

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