期刊
ADVANCED MATERIALS
卷 32, 期 26, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202002300
关键词
anomalous Hall effect; antiferromagnetic piezospintronics; magnetic tunnel junctions; Mn3Ga; noncollinear antiferromagnets
类别
资金
- National Natural Science Foundation of China (NSFC) [51822101, 51861135104, 51771009, 11704018]
One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal-D0(19) hexagonal Mn3Ga-is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.
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