4.8 Article

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

期刊

ADVANCED MATERIALS
卷 32, 期 19, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202000740

关键词

2D semiconductors; electrochemically switchable transistors; functional devices; molecular switches; subthreshold swing

资金

  1. European Commission through the ERC project SUPRA2DMAT [GA-833707]
  2. Marie-Curie IEF STELLAR [GA795615]
  3. Graphene Flagship Core 2 project [GA-785219]
  4. Marie Sklodowska-Curie project ITN project iSwitch [GA-642196]
  5. Agence Nationale de la Recherche through the Labex project CSC within the Investissement d'Avenir program [ANR-10-LABX-0026 CSC, ANR-10-120 IDEX-000202]
  6. Agence Nationale de la Recherche through the Labex project NIE within the Investissement d'Avenir program [ANR-10-120 IDEX-000202, ANR-11-LABX-0058 NIE]
  7. International Center for Frontier Research in Chemistry (icFRC)
  8. Spanish Ministry of Economy and Competitiveness, through projects FANCY [CTQ2016-80030-R]
  9. Spanish Ministry of Economy and Competitiveness, through project Severo Ochoa Programme for Centers of Excellence in RD [SEV-2015-0496]
  10. Generalitat de Catalunya [2017SGR918]

向作者/读者索取更多资源

As Moore's law is running to its physical limit, tomorrow's electronic systems can be leveraged to a higher value by integrating More than Moore technologies into CMOS digital circuits. The hybrid heterostructure composed of two-dimensional (2D) semiconductors and molecular materials represents a powerful strategy to confer new properties to the former components, realize stimuli-responsive functional devices, and enable diversification in More than Moore technologies. Here, an ionic liquid (IL) gated 2D MoS2 field-effect transistor (FET) with molecular functionalization is fabricated. The suitably designed ferrocene-substituted alkanethiol molecules not only improve the FET performance, but also show reversible electrochemical switching on the surface of MoS2. Field-effect mobility of monolayer MoS2 reaches values as high as approximate to 116 cm(2) V-1 s(-1) with I-on/I-off ratio exceeding 10(5). Molecules in their neutral or charged state impose distinct doping effect, efficiently tuning the electron density in monolayer MoS2. It is noteworthy that the joint doping effect from IL and switchable molecules results in the steep subthreshold swing of MoS2 FET in the backward sweep. These results demonstrate that the device architecture represents an unprecedented and powerful strategy to fabricate switchable 2D FET with a chemically programmed electrochemical signal as a remote control, paving the road toward novel functional devices.

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