期刊
ADVANCED MATERIALS
卷 32, 期 35, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201907166
关键词
contact resistance; device structures; display technologies; thin film transistors; transition metal dichalcogenides
类别
资金
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2016M3D1A1900035]
- LG Display Co., Ltd.
- National Research Foundation of Korea [4120200113769] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.
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