期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 22, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202001283
关键词
graphene; III-nitrides; light emitting diodes; nitrogen lattice polarity; nucleation
类别
资金
- National Key RAMP
- D Program of China [2017YFE0100300]
- Beijing Outstanding Young Scientist Program [BJJWZYJH0120191000103]
- Science Challenge Project [TZ2016003]
- National Natural Science Foundation of China [61734001, 61521004, 61674010, 61674068]
- Bureau of Industry and Information Technology of Shenzhen [201901161512]
- Beijing Natural Science Foundation [JQ19004]
Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga-polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen-polarity GaN films on transferred graphene on non-polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where C-N bonds are formed in graphene and provide nucleation sites for GaN and leading to N-polarity GaN epitaxy. The N-polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N-polarity than that at Ga-polarity, green light emitting diodes are fabricated on the graphene-assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III-nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices.
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