4.8 Article

Ultrafast Responsive Non-Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 21, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202000764

关键词

block copolymers; floating-gate photomemory; multi-level memory; organic-inorganic hybrid perovskite

资金

  1. Ministry of Science and Technology (MOST) in Taiwan [MOST 108-2636-E-194-001, MOST 109-2636-E-194-001]
  2. Advanced Institute of Manufacturing with High-tech Innovations from The Featured Areas Research Center Program by the Ministry of Education (MOE) in Taiwan

向作者/读者索取更多资源

The exotic photophysical properties of organic-inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti-solvent functionalities of the perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns(-1), high charge transfer efficiency of 89%, ON/OFF current ratio of 10(4), and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据