期刊
ACS NANO
卷 14, 期 6, 页码 6834-6844出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c00645
关键词
bilayer graphene; CVD; AB stacking; band gap; field-effect transistor
类别
资金
- JSPS KAKENHI [JP16H06331, JP16H06333, JP18H03864, JP18K14119, JP19K22113, JP19H00755]
- JST CREST, JSPS A3 Foresight Program [JPMJCR18I1]
- Canon Foundation
Controlling the stacking order in bilayer graphene (BLG) allows realizing interesting physical properties. In particular, the possibility of tuning the band gap in Bernal-stacked (AB) BLG (AB-BLG) has a great technological importance for electronic and optoelectronic applications. Most of the current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesize highly pure large-area ABBLG by chemical vapor deposition using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer growth times (99.4% of BLG has AB stacking), due to catalystassisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements on field-effect transistors using two different device configurations. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a way to control the stacking order of catalytically grown two-dimensional materials.
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