期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 19, 页码 21944-21951出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c06904
关键词
CsPbBr3 quantum dots; light-emitting field-effect transistor; organic/inorganic hybrid field-effect transistor; diffusion length; wide recombination zone
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF20100020209, NRF2017R1D1A1B03027893, NRF2018R1D1A1A02085371]
- POSCO Science Fellowship of POSCO TJ Park Foundation
Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 mu m, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.
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