4.8 Article

Thickness-Independent Energy Dissipation in Graphene Electronics

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 15, 页码 17718-17724

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c00113

关键词

energy dissipation; Raman spectrum; graphene; thermal transport; infrared emission

资金

  1. National Natural Science Foundation of China (NSFC) [61801498, 11404399, 11874423, 51701237]
  2. Scientific Researches Foundation of National University of Defense Technology [ZK18-01-03, ZK18-03-36]
  3. China postdoctoral science foundation (CPSF) [2019M663569]
  4. Youth talent lifting project [17-JCJQ-QT-004]

向作者/读者索取更多资源

The energy dissipation issue has become one of the greatest challenges of the modern electronic industry. Incorporating graphene into the electronic devices has been widely accepted as a promising approach to solve this issue, due to its superior carrier mobility and thermal conductivity. Here, using Raman spectroscopy and infrared thermal microscopy, we identify the energy dissipation behavior of graphene device with different thicknesses. Surprisingly, the monolayer graphene device is demonstrated to have a comparable energy dissipation efficiency per unit volume with that of a few-layer graphene device. This has overturned the traditional understanding that the energy dissipation efficiency will reduce with the decrease of functional materials dimensions. Additionally, the energy dissipation speed of the monolayer graphene device is very fast, promising for devices with high operating frequency. Our finding provides a new insight into the energy dissipation issue of two-dimensional materials devices, which will have a global effect on the development of the electronic industry.

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