期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 13, 页码 15414-15421出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c01744
关键词
PbS CQDs; silicon; ROICs; heterojunction; photodetector
资金
- Science and Technology Commission of Shanghai Municipality [16JC1402100, 16520720700]
- National Key Research and Development Program of China [2016YFA0204000, 2018YFB2201000, 2019YFB2203400]
- National Natural Science Foundation of China [U1632118, 21571129, 61975121]
- ShanghaiTech start-up funding
- 1000 Young Talents program
- Centre for High-resolution Electron Microscopy (C.EM) [EM02161943]
- SPST, ShanghaiTech University
- Analytical Instrumentation Center [SPST-AIC10112914]
Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 x 10(11) Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.
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