4.8 Article

Highly individual SWCNTs for high performance thin film electronics

期刊

CARBON
卷 103, 期 -, 页码 228-234

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2016.02.099

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资金

  1. Aalto Energy Efficiency (AEF) program through the MOPPI project
  2. JST-EC DG RTD Coordinated Research Project IRENA
  3. Academy of Finland
  4. TEKES project CARLA
  5. Austrian Science Fund (FWF) [P 28322-N36]
  6. Finnish Foundation for Technology Promotion
  7. Grants-in-Aid for Scientific Research [26107521, 24681030, 15H05867] Funding Source: KAKEN
  8. Austrian Science Fund (FWF) [P28322] Funding Source: Austrian Science Fund (FWF)

向作者/读者索取更多资源

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Omega/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Omega/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm(2) V(-1)s(-1) and ON/OFF-ratios up to 10(6). (C) 2016 Elsevier Ltd. All rights reserved.

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