4.6 Article

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

期刊

COATINGS
卷 10, 期 1, 页码 -

出版社

MDPI
DOI: 10.3390/coatings10010002

关键词

amorphous oxide semiconductors; magnetron sputtering; InGaZnO; ZnSnO

资金

  1. ERDF [CZ.02.1.01/0.0/0.0/15_003/0000358]
  2. project CENTEM [CZ.1.05/2.1.00/03.0088]
  3. project CENTEM PLUS [LO1402]

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Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 x 10(-2) Ohm center dot cm and an electron mobility of 18 cm(2)center dot V-1 center dot s(-1). The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

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