期刊
MATERIALS RESEARCH LETTERS
卷 8, 期 3, 页码 103-109出版社
TAYLOR & FRANCIS INC
DOI: 10.1080/21663831.2019.1702114
关键词
Void; dislocation; plasticity; rupture
资金
- Center for Integrated Nanotechnologies, an Office of Science User Facility
- U.S. Department of Energy's National Nuclear Security Administration [DENA0003525]
IMPACT STATEMENT Void growth during ductile rupture is mediated by dislocation adsorption, not dislocation emission as previously theorized. The mechanism is consistent with Rice-Tracey scaling and observations of voids near cell walls. We propose a dislocation adsorption-based mechanism for void growth in metals, wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void, growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally, we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress, consistent with the well-known Rice-Tracey equation.
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