期刊
NPJ QUANTUM INFORMATION
卷 6, 期 1, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41534-020-0247-7
关键词
-
类别
资金
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. DOE's National Nuclear Security Administration [DE-NA-0003525]
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 degrees C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T-1 times greater than 1 s at cryogenic temperatures (15 K) with a T-2* = 317 ns and a T-2 = 81 mu s, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据