期刊
PHOTONICS RESEARCH
卷 8, 期 3, 页码 352-358出版社
OPTICAL SOC AMER
DOI: 10.1364/PRJ.379555
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资金
- European Research Council
- Agence Nationale de la Recherche
We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes. (C) 2020 Chinese Laser Press
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