期刊
OPTICA
卷 7, 期 4, 页码 263-266出版社
OPTICAL SOC AMER
DOI: 10.1364/OPTICA.388383
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- Agence Nationale de la Recherche [ANR-11-EQPX-0016]
- H2020 LEIT Information and Communication Technologies [780240]
- Agence Nationale de la Recherche (ANR) [ANR-11-EQPX-0016] Funding Source: Agence Nationale de la Recherche (ANR)
The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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