期刊
CRYSTALS
卷 9, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/cryst9120651
关键词
semiconductors; nanoindentation; incipient plasticity; dislocation; phase transformation
资金
- National Science Centre, Poland [2016/21/B/ST8/02737]
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I -> GaAs-II phase transformation, we concluded that the elastic-plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic-plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.
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