期刊
ADVANCED ELECTRONIC MATERIALS
卷 6, 期 2, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201901012
关键词
artificial synapses; memristive device arrays; memristors; multilevel storage; spike timing dependent plasticity
资金
- National Natural Science Foundation of China [61774057]
- National Key Research and Development Program [2017YFB0405600]
- Open Fund of Hubei Key Laboratory of Applied Mathematics [HBAM 201801]
- Open Fund of State Key Laboratory on Integrated Optoelectronics [IOSKL2018KF08]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDPB12]
- Hundred Talents Program (Chinese Academy of Sciences)
- Shanghai Pujiang Talent Program [18PJ1411100]
HfO2-based memristors that remembers the history of the current that has passed through them have attracted great interest for use as artificial synapses in neuromorphic systems. However, the low resistance contrast exhibited by HfO2-based memristors seriously decreases their recognition accuracy. By inserting a 2 nm BiFeO3 layer a large memory window of 10(4) and remarkable pulse endurance of 10(8) cycles are achieved. Multilevel storage capability is also demonstrated by controlling the stop voltages in the RESET process. The conductance-modulation characteristics of a BiFeO3/HfO2 memristor can be used to mimic the learning behaviors of biological synapses, and spiking timing dependent plasticity is mimicked, which is viewed as an important learning rule of biological synapses. Moreover pattern learning and memorization ability like the human brain are achieved by a 3 x 3 memristive device array.
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