期刊
ADVANCED ELECTRONIC MATERIALS
卷 6, 期 3, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201901007
关键词
graphene; InGaAs; photodetectors
资金
- National Natural Science Foundation of China [61774042, 61774040]
- Shanghai Municipal Natural Science Foundation [17ZR1446500, 17ZR1446600, 18ZR1445800, 18ZR1445900, 19YF1454600]
- First-Class Construction project of Fudan University [XM03170477]
- State Key Laboratory of ASIC & System, Fudan University [2018MS001]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- Fudan University-CIOMP Joint Fund [FC2018002]
- National Key R&D Program of China [2018YFA0703700]
- Open Fund of the State Key Laboratory of Integrated Optoelectronics [IOSKL2019KF05]
- China Post-doctoral Science Foundation (pre-station)
- National Young 1000 Talent Plan of China
Broadband light detection is crucial for a variety of optoelectronic applications in modern society. As an important-near infrared (NIR) photodetector, InGaAs PIN photodiodes demonstrate high detection performance. However, they have a limited response range because of optical absorption by the window layer or substrate. To exploit the broadband absorption capability of narrow-bandgap InGaAs, a phototransistor based on a hybrid InGaAs-SiO2-graphene heterostructure is presented. In this system, graphene serves as a transparent conducting channel to sense optical absorption in the InGaAs. In contrast to InGaAs PIN photodiodes, the hybrid InGaAs phototransistor demonstrates multicolor photodetection over a broadband wavelength range from the ultraviolet to NIR. Furthermore, it manifests a high photoresponsivity of above 10(3) A W-1 under weak light irradiation, a large external quantum efficiency, and a fast response speed of 200 kHz. The results pave the way for the development of high-performance broadband photodetectors based on mixed-dimensional heterostructures.
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