相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe
Tao Shen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)
Van der Waals integration before and beyond two-dimensional materials
Yuan Liu et al.
NATURE (2019)
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
Yan Wang et al.
NATURE (2019)
Mobility Deception in Nanoscale Transistors: An Untold Contact Story
Joseph R. Nasr et al.
ADVANCED MATERIALS (2019)
Energy Dissipation in Black Phosphorus Heterostructured Devices
Fida Ali et al.
ADVANCED MATERIALS INTERFACES (2019)
Hybrid single-layer/bulk tungsten diselenide transistors by lithographic encoding of material thickness in chemical vapor deposition
Ingrid Liao et al.
2D MATERIALS (2019)
van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling-Bond-Free WSe2 and WS2
Ruixia Wu et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
Xiaorui Zheng et al.
NATURE ELECTRONICS (2019)
Improved thermoelectric performance of bilayer Bi2O2Se by the band convergence approach
Menglu Li et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Optimizing the thermoelectric transport properties of Bi2O2Se monolayer via biaxial strain
Ning Wang et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2019)
Three-layer phosphorene-metal interfaces
Xiuying Zhang et al.
NANO RESEARCH (2018)
Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide
Jaeho Jeon et al.
ACS NANO (2018)
Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
Ahmet Avsar et al.
ADVANCED MATERIALS (2018)
Electronic Transport in Two-Dimensional Materials
Vinod K. Sangwan et al.
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, VOL 69 (2018)
Contact engineering for 2D materials and devices
Daniel S. Schulman et al.
CHEMICAL SOCIETY REVIEWS (2018)
Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts
Ching-Hua Wang et al.
NANO LETTERS (2018)
Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials
Hunyoung Bark et al.
NANOSCALE (2018)
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions
Yuan Liu et al.
NATURE (2018)
Orbital controlled band gap engineering of tetragonal BiFeO3 for optoelectronic applications
L. Qiao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts
Xiaohui Hu et al.
2D MATERIALS (2018)
Band-Gap Reduction in (BiCrO3)(m)/(BiFeO3)(n) Superlattices: Designing Low-Band-Gap Ferroelectrics
S. Zhang et al.
PHYSICAL REVIEW APPLIED (2018)
Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
Xu Cui et al.
NANO LETTERS (2017)
Metallic Vanadium Disulfide Nanosheets as a Platform Material for Multifunctional Electrode Applications
Qingqing Ji et al.
NANO LETTERS (2017)
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Jinxiong Wu et al.
NATURE NANOTECHNOLOGY (2017)
Tuning the Schottky contacts at the graphene/WS2 interface by electric field
Fang Zhang et al.
RSC ADVANCES (2017)
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash et al.
SCIENTIFIC REPORTS (2017)
Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
Naveen Kaushik et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes
Yuanyue Liu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2016)
Quantum Hall effect in black phosphorus two-dimensional electron system
Likai Li et al.
NATURE NANOTECHNOLOGY (2016)
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu et al.
2D MATERIALS (2016)
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Yuanyue Liu et al.
SCIENCE ADVANCES (2016)
First-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces
Mojtaba Farmanbar et al.
PHYSICAL REVIEW B (2016)
Large-area high-quality 2D ultrathin Mo2C superconducting crystals
Chuan Xu et al.
NATURE MATERIALS (2015)
Controlling the Schottky barrier at MoS2/metal contacts by inserting a BN monolayer
Mojtaba Farmanbar et al.
PHYSICAL REVIEW B (2015)
van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating
J. E. Padilha et al.
PHYSICAL REVIEW LETTERS (2015)
Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts
M. Venkata Kamalakar et al.
SMALL (2015)
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
Ashish V. Penumatcha et al.
NATURE COMMUNICATIONS (2015)
Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier
Zhi-Peng Ling et al.
SCIENTIFIC REPORTS (2015)
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Han Liu et al.
ACS NANO (2014)
The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces
Cheng Gong et al.
NANO LETTERS (2014)
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
Lili Yu et al.
NANO LETTERS (2014)
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Rajesh Kappera et al.
NATURE MATERIALS (2014)
Controllable Schottky Barriers between MoS2 and Permalloy
Weiyi Wang et al.
SCIENTIFIC REPORTS (2014)
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Jiahao Kang et al.
PHYSICAL REVIEW X (2014)
WSe2 field effect transistors with enhanced ambipolar characteristics
Saptarshi Das et al.
APPLIED PHYSICS LETTERS (2013)
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Cheng Gong et al.
APPLIED PHYSICS LETTERS (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
Jen-Ru Chen et al.
NANO LETTERS (2013)
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Manish Chhowalla et al.
NATURE CHEMISTRY (2013)
Two-Dimensional Transition Metal Carbides
Michael Naguib et al.
ACS NANO (2012)
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Hui Fang et al.
NANO LETTERS (2012)
Nanoscale Mapping of Electrical Resistivity and Connectivity in Graphene Strips and Networks
Peter N. Nirmalraj et al.
NANO LETTERS (2011)
Van der Waals density functionals applied to solids
Jiri Klimes et al.
PHYSICAL REVIEW B (2011)
First-principles study of the dipole layer formation at metal-organic interfaces
Paul C. Rusu et al.
PHYSICAL REVIEW B (2010)
Tuning the Graphene Work Function by Electric Field Effect
Young-Jun Yu et al.
NANO LETTERS (2009)
Doping graphene with metal contacts
G. Giovannetti et al.
PHYSICAL REVIEW LETTERS (2008)
Electrostatic modification of novel materials
C. H. Ahn et al.
REVIEWS OF MODERN PHYSICS (2006)
Formation of a new (1T) trigonal NbS(2) polytype via atmospheric pressure chemical vapour deposition
CJ Carmalt et al.
JOURNAL OF MATERIALS CHEMISTRY (2004)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
Exchangelike effects for closed-shell adsorbates:: Interface dipole and work function -: art. no. 096104
PS Bagus et al.
PHYSICAL REVIEW LETTERS (2002)
分享论文
