期刊
PHYSICAL REVIEW APPLIED
卷 12, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.12.064050
关键词
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资金
- UK Engineering and Physical Sciences Research Council (EPSRC) Quantum System Engineering (QSE) Skills Training Hub
- EPSRC [1801493] Funding Source: UKRI
The reduction of nanoelectronic devices to sub-10 nm sizes raises the prospect of electronics at the atomic scale, while also facilitating studies on nanoscale device physics. Single-atom transistors, where the current-switching element is formed by one atom and the information packet size is reduced to one electron, can create electronic switches scaled to their ultimate physical limits. Hitherto, single-atom transistor operation has been limited to low temperatures due to shallow quantum wells, which inhibit room-temperature nanoelectronic applications. Furthermore, the interaction between multiple single-atom elements at room temperature has yet to be demonstrated. Here, we show that quantum interactions between P dopants in Si/SiO2/Si single-atom transistors lead to room-temperature double quantum dot behavior. Hexagonal regions of charge stability and gate-controlled tunnel coupling between P atoms are observed at room temperature. Image processing is used to help reduce observer bias in data analysis. Single-electron device simulation is used to investigate evolution of the charge-stability region with varying capacitance and resistance. In combination with extracted tunnel capacitances and resistances, this allows experimental trends to be reproduced and provides information on the dopant-atom arrangement.
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