期刊
NANOMATERIALS
卷 10, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/nano10020297
关键词
freestanding GaN; HVPE; Schottky diodes; silicon; transport mechanism
类别
资金
- Korea Basic Science Institute Research [C070300, R40001]
- National Research Foundation of Korea (NRF) - Ministry of Education [2018R1D1A1B07042909, 2016R1A6A1A03012069]
- Ministry of Science and ICT [NRF-2018R1A2A3074921]
- National Research Council of Science & Technology (NST), Republic of Korea [C070300] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018R1D1A1B07042909] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current-voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 10(3)-10(5) at the forward to reverse current at +/- 1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据