期刊
ADVANCED MATERIALS INTERFACES
卷 7, 期 9, 页码 -出版社
WILEY
DOI: 10.1002/admi.201901848
关键词
GaSe; MoS2 heterostructure; Ohmic-contact; photoresponse; self-driven photodetector
资金
- National Natural Science Foundation of China [61971108, 61804023, 61604100, 61974097]
- Key R&D Program of Sichuan Province [2018GZ0527]
- Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201805]
- Sichuan Youth Science and Technology Foundation [19JCQN0106]
- China National Funds for Distinguished Young Scientists [61825102]
In this letter, the vertically-stacked GaSe/MoS2 heterostructures with indium tin oxide (ITO) and Ni/Au as contact electrodes are successfully fabricated, respectively. The GaSe/MoS2 heterostructure exhibits a broadband photoresponse covering the range of visible to near-infrared spectra at room temperature without external bias voltage. When ITO serves as contact electrodes, a high rectification ratio, i.e., 1.5 x 10(4) at V-DS = +/- 1 V, and an excellent photoelectric performance, i.e., responsivity of approximate to 0.67 A W-1, specific detectivity of approximate to 2.3 x 10(11) cm Hz(1/2) W-1 and external quantum efficiency of approximate to 160% at the wavelength of 520 nm is achieved. Moreover, the GaSe/MoS2 heterostructure with Ohmic-contact ITO electrodes demonstrates a faster response time of 155 mu s, which is 4 times faster than the GaSe/MoS2 heterostructure with Ni/Au electrodes and about 300 times faster than previous reports. These results reveal the presence of an abrupt p-n junction between GaSe and MoS2 and significant role of electrode-contact mode in determining the photoelectric properties of GaSe/MoS2 heterostructure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据