期刊
ACS PHOTONICS
卷 7, 期 2, 页码 528-533出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.9b01709
关键词
quantum dots; silicon; avalanche photodiodes; gain; bandwidth
类别
资金
- National Key Research and Development Program of China [2018YFB2201000, 2019YFB2203400]
- Shanghai Sailing Program [17YF1429300]
- ShanghaiTech University [F-0203-16-002]
- Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy [DE-AR0001042]
Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 mu m at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.
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