Capacitive effect: An original of the resistive switching memory

Interplay between ions and electrons endows memristor with promising applications from the high density storages, memory logic gates to neuromorphic chips. The interplay-induced memristor evolution stage involving an original stage (non-standard faradic capacitance, NFC), transition stage (battery-like capacitance, BLC) and resistive switching state (RS) are discovered in the Ag vertical bar TiOx nanobelt vertical bar Ti device under different moisture levels. Generation, migration and interplay between ions and electrons are effectively restricted for the NFC observed in dry ambient. The OH- suspending on the surface V-o due to the H2O-based redox reaction results in the device evolving from the NFC to BLC under moisture circumstance. Strong interplay with ions, electron transfer and migration of OH- ions push the device into the RS state. Based on theory calculations, an energy band-based physical model is proposed to comprehend the evolution process. This work gives an insight into the moisture effect on the resistive switching behaviors and the evolution track of memristor, which is meaningful for construction neuromorphic chip with an ultralow energy consumption.