期刊
MICROMACHINES
卷 11, 期 1, 页码 -出版社
MDPI
DOI: 10.3390/mi11010092
关键词
ammonia; gas sensor; low concentration; CMOS process; MEMS
类别
资金
- Ministry of Science and Technology (MOST) of the Republic of China
- MOST [108-2221-E-005 -065 -MY2]
This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are the stacked aluminum layers that are made using the CMOS process. The sensing material; polypyrrole/reduced graphene oxide (PPy/RGO), is synthesized using the oxidation-reduction method; and the material is characterized using an electron spectroscope for chemical analysis (ESCA), a scanning electron microscope (SEM), and high-resolution X-ray diffraction (XRD). After the CMOS process; the AGS needs post-processing to etch an oxide layer and to deposit the sensing material. The resistance of the AGS changes when it is exposed to ammonia. A non-inverting amplifier circuit converts the resistance of the AGS into a voltage signal. The AGS operates at room temperature. Experiments show that the AGS response is 4.5% at a concentration of 1 ppm NH3; and it exhibits good repeatability. The lowest concentration that the AGS can detect is 0.1 ppm NH3
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