期刊
MICROMACHINES
卷 10, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/mi10120872
关键词
porous silicon; Pd nanoparticles-assisted chemical etching; etching rate; ethanol electrooxidation
类别
资金
- Russian Science Foundation [19-79-00205]
- Russian Science Foundation [19-79-00205] Funding Source: Russian Science Foundation
The formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity rho = 0.01 Omega.cm at 25 degrees C, 50 degrees C and 75 degrees C in HF/H2O2/H2O solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis. It is shown that por-Si, formed by Pd nanoparticles-assisted chemical etching, has the property of ethanol electrooxidation. The chromatographic analysis of ethanol electrooxidation products on por-Si/Pd shows that the main products are CO2, CH4, H-2, CO, O-2, acetaldehyde (CHO)(+), methanol and water vapor. The mass activity of the por-Si/Pd system was investigated by measuring the short-circuit current in ethanol solutions. The influence of the thickness of porous silicon and wafer on the mass activity and the charge measured during ethanol electrooxidation was established. Additionally, the mechanism of charge transport during ethanol electrooxidation was established.
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