期刊
ADVANCED OPTICAL MATERIALS
卷 8, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201902003
关键词
808 nm excitation; broadband near-infrared emission; chromium doping; Huang-Rhys factor
资金
- National Natural Science Funds of China [51672115]
- Gansu Province Development and Reform Commission [51502122]
High-radiance near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are demanded for wearable biosensing devices and the properties of these pc-LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet-visible and NIR-responded broadband NIR NaScGe2O6:Cr3+ phosphor is reported. Under 490 nm excitation, NaScGe2O6:Cr3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc-LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe2O6:Cr3+ and 450 nm blue LED chip. The ability of high-power NIR light of the NIR pc-LED to penetrate human tissues is observed successfully. Additionally, in NaScGe2O6:Cr3+, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time.
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