期刊
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
卷 10, 期 2, 页码 332-338出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCPMT.2019.2928323
关键词
Copper bonding; nitrogen passivation; surface treatment; 3-D packaging
类别
资金
- Ministry of Science and Information & Communication Technology through the National Research Foundation of Korea (NSF) within the Basic Science Research Program [NRF-2018R1A2B6003921]
- National Research Foundation of Korea [2018R1A2B6003921] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The success of wafer-to-wafer or chip-to-chip bonding in 3-D packaging relies on the development of planarized, activated, and oxygen-free Cu surface. Preventing Cu oxidation is becoming a crucial issue in chip-to-chip bonding processes. In this study, a two-step plasma pretreatment process was demonstrated to prevent copper oxidation by virtue of forming a nitride passivation layer on the Cu surface. The two-step plasma pretreatment consisted of Ar plasma to activate the Cu surface, followed by N2 plasma to passivate the Cu surface. It was found that the pressure in the Ar plasma step had the greatest effect on the formation of nitrate passivation on the Cu surface, and the lower the pressure in the Ar plasma step, the better the formation of copper nitrate in the N2 plasma step. The two-step plasma pretreatment provided a nitride-passivated Cu surface and significantly improved the Cu-to-Cu bonding quality. This process may enable Cu-to-Cu bonding in an atmospheric environment.
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