期刊
IEEE PHOTONICS JOURNAL
卷 12, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2019.2960324
关键词
Silicon photonics; DFB; waveguide laser
资金
- National Natural Science Foundation of China [61635001]
- Beijing key R D plan [Z19110004819006]
- State Key Laboratory of Advanced Optical Communication Systems Networks, China [2018GZKF11]
Narrow-linewidth silicon-based lasersplay an important role in the field of silicon photonics. In this paper, we have proposed a high performance narrow-linewidth silicon-based Er silicate laser, based on strip-loaded DFB waveguide with a hybrid pump and signal co-resonant cavity. The saturated output power can reach over 90;mW at 1535;nm, with a maximum power conversion efficiency of 66;. The pump threshold is about 22;mW, and the laser linewidth is also as narrow as about 755;Hz. The results provide a new way for future scale integrated ultra-narrow-linewidth silicon-based lasers application.
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